Comparative Analysis of Different Oxides for MoS2 Transistor

Abstract

The purpose of this study is to evaluate the performance of MoS2 transistor with different gate oxides. This paper systematically evaluates various performance parameters of transistors such as threshold voltage (Vth), on/off ratio, maximum drain current (Id), transconductance (gm), and output conductance (gd) . This comprehensive analysis is done using six different oxides namely silicon dioxide (SiO2), hafnium oxide (HfO2), lanthanum oxide (La2O3), strontium zirconium oxide (SrZrOx), composite of PMMA:SrZrOx, and titanium dioxide (TiO2) for a back-gate device. Results of the paper suggest that SrZrOx exhibits better performance with lower Vth is -0.4 V, along with on/off ratio, maximum Id,and gm, are 1013, 662.57 μA, and 8.12 μS respectively. Device with a relatively higher on/off ratio, high drive current, high gm and lower Vthdemonstrates superior switching and improved performance. With the achieved performance of the above device offers considerable potential for real-time, energy-efficient applications, particularly where power consumption is a big concern. Device with SrZrOx oxide employed for various real-time applications including wearable electronics, medical and industrial applications.